Semiconductor device structure having three dielectric layers and its manufacture

PROBLEM TO BE SOLVED: To reduce a short circuit by forming a first via where a part of a substrate is exposed from the upper face of a polymer film through the film and a first insulating layer, a removing only a second insulating layer covering a metal interconnection stud end and forming a second via from the second insulating layer to the stud end. SOLUTION: The first via 60 which vertically extends from the upper surface 45 of the polymer film through the polymer film 40 and the first insulating layer 30 and exposes a part of the semiconductor substrate 20 is formed. Conductive metal is deposited to the first via 60 and it is planarized A metal interconnection stud 65 having the end making a plane with the upper surface 45 of the polymer film is formed. Then, the part of the second insulating layer 50 which directly covers the end 70 of the stud 65 is removed and the second via 80 extending to the stud end 70 through the second insulating layer 50 is formed. Thus, the short circuit of a metallization layer in the semiconductor device can be reduced.