ВЛИЯНИЕ РЕЖИМОВ ФОРМИРОВАНИЯ СИЛИЦИДА ПЛАТИНЫ МЕТОДОМ БЫСТРОЙ ТЕРМООБРАБОТКИ НА ПАРАМЕТРЫ ДИОДОВ ШОТТКИ

The results of studying of the impact of formation modes of platinum silicide using qiuck heat treatment on electrophysical parameters of Schottky diodes are presented. It is shown that this treatment, as compared to the traditional one, allows at the cost of reducing of microrelief of boundary of PtSi–Si, and also obtaining as a result of treatment a less defective and equilibrium structure of the barrier layer, to raise barrier height from 0,804 to 0,825 V, to reduce leakage current from –4,42·10 -6 to –2,85·10 -6  A and in 1,25 times and to raise the reliability of Schottky diodes at operating temperature 125 °C.