Graphene field effect transistor and manufacturing method thereof

Provided are a graphene field effect transistor and a manufacturing method thereof.The manufacturing method comprises the following steps that a top gate metal is used as a gate medium under a mask protecting top gate metal, and a gate medium layer is etched to remove the gate medium covering a graphene active area between a gate source and a gate drain; a top gate electrode is used as a mask to etch graphene, and a lattice structure of a graphene material is destroyed to form a defect; then, a metal film layer is formed on a formed device, and a source electrode and a drain electrode are prepared on the metal film layer; and the completed device is annealed.By the adoption of the manufacturing method, the separation distance between the gate source and the gate drain can be decreased, the graphene pollution caused by a device machining process is effectively avoided, the lower contact resistivity can be obtained by partially etching the graphene material in a contact area, and accordingly the performance of the graphene transistor can be improved.