Single-event-effect sensetivity characterization of LSI circuits with a laser-based and a pulsed gamma-ray testing facilities used in combination

Evaluation formulas are presented for equivalent heavy-ion linear energy transfer in the context of LSI-circuit sensetivity to single-event effects, based on local laser test data. The method suggested is validated for calculating the linear energy transfer from laser-pulse energy on the basis of radiation-response measurements on pulsed gamma-ray test sets. The method is free from errors related to the uncertainty in electrical properties of semiconductor structures.