Substituted tetraphenyl-silicon alkoxyl dibenzothiophene based derivative, and preparation method for derivative

The invention discloses a substituted tetraphenyl-silicon alkoxyl dibenzothiophene based derivative. The derivative has a structure represented by a formula shown in the description. The derivative disclosed by the invention is a hole-transporting material in an OLED apparatus. By using tetraphenyl-silicon as a main body, dibenzothienyl groups with hole-transporting ability are connected to para-positions of tetraphenyl-silicon. In order to better adjust the HOMO energy level, alkoxy goups with electron donating ability are introduced onto the dibenzothienyl groups, so that the HOMO energy level of the material is improved, the glass transition temperature of the material is improved, and the material has a relatively high energy level in a triplet state and has excellent hole-transporting ability. The material disclosed by the invention is simple in preparation process and provides an excellent material for OLED display and illumination.