Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering
2003
In this paper, subband energy levels of an AlGaAs separate-confinement-hetrostructure (SCH) double quantum well (DQW) layer are determined by photoreflectance (PR) and compared with those determined by the self-excited ERS of lasers fabricated from the same DQW structure but with different waveguide thickness. Subband energy levels determined by both measurements are in a good agreement.
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