Schottky enhancement of contacts to n-GaAs via the exchange mechanism using NiAlxGa1−x as a metallization

Based on the thermodynamic/kinetic model of the exchange mechanism, the ternary intermetallic compound NiAlxGa1−x (where 0sputter deposition of NiAlxGa1−x metallizations, with compositions corresponding to x=0.00, 0.25, 0.50, 0.75 and 1.00. These contacts were subjected to rapid thermal processing, and analyzed using cross-sectional high resolution transmission electron microscopy and I-V characterization. Electron microscopy and concomitant electron dispersive spectroscopic analysis indicated that a very thin (2.5 nm) interfacial region of AlxGa1−xAs was formed in annealed c...