Application advantages of high voltage high current IGBTs with punch through technology

New process technologies are extending the application range of IGBT modules. 2500 V and 3300 V/1200 A IGBTs have been developed using an optimized punch-through design that achieves a positive temperature coefficient of saturation voltage and rugged safe operating area of the nonpunch-through approach while retaining the low loss characteristics of punch-through technology. Special wafer processing, optimizing the collector p+ concentration and local lifetime control, is employed to achieve these characteristics. This paper discusses the adaptation of the punch-through design to achieve the desired device characteristics.