X‐ray photoemission and Raman scattering spectroscopic study of surface modifications of silicon induced by electron cyclotron resonance etching

Surface modifications of silicon induced by electron cyclotron resonance (ECR) etching with CF4 is studied using x‐ray photoemission spectroscopy and Raman scattering techniques. It is shown that a silicon sample etched by ECR exhibits a thinner surface residual layer compared to those exposed to reactive ion etching (RIE) or hybrid ECR/RIE. Evidence of plasma‐induced structural disorder in the silicon surface was only observed in the RIE‐etched sample.