Electrical transport in layer-by-layer solution deposited Cu2SnS3 films: Effect of thickness and annealing temperature

Abstract Thermoelectric and photothermoelectric analysis have been employed to determine the carrier transport in solution deposited Cu 2 SnS 3 films in temperature range 120–273 K. The effect of varying thickness and annealing temperatures on the electrical conduction are studied. The variation in conductivity is found to be thermally activated. The change in conductivity with thickness and annealing temperature is resolved into individual contributions of carrier concentration and mobility. Both carrier concentration and mobility change have been found to affect the conductivity under different variations. The changes observed have been qualitatively correlated with incorporation of defects during layer by layer deposition of films. The change in concentration and distribution of these defects are suggested to alter observed electrical transport of Cu 2 SnS 3 films of different thickness and after annealing at different temperatures.