On the Feasibility of an Ettingshausen Semiconductor Laser.

Abstract : The possibility of achieving stimulated recombi nation radiation in a semiconductor by an alter nate method to the injection diode is investi gated. The results show that an excess concentra tion of recombination carriers sufficient to initiate laser action may be obtained in conductors by drift and deflection in a magnetic field (Ettingshausen effect). However, further data are required to calculate the exact size of the threshold value. Although the current densities required for operating the device ap pear of similar order as for injection diodes, the pumping method is based entirely on bulk ef fects. Therefore, the device offers a number of practical advantages over junction devices, such as a larger emitting area and fast response time. The design of a possible Ettingshausen laser is discussed in detail and problem areas for future work are listed. (Author)