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Increasing More Bonding Energy in Nitrogen Plasma-Activated Wafer Bonding by HF-Dip
Increasing More Bonding Energy in Nitrogen Plasma-Activated Wafer Bonding by HF-Dip
2014
F. S. Lo
C. C. Chiang
C. Li
T.-H. Lee
Keywords:
Nitrogen
Thermocompression bonding
Anodic bonding
Plasma
Materials science
Wafer bonding
Inorganic chemistry
Bond energy
nitrogen plasma
Correction
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