The Study of Morphology and Photoelectric Sensitivity of Low-Temperature Ge/Si Heterostructures with Ge Quantum Dots

The morphology of low-temperature (growth temperature 360 °C) multilayer Ge/Si heterostructures with Ge quantum dots was investigated by means of transmitting electron microscopy, scanning tunneling microscopy and X-ray optics. The possibility to determine integral morphological characteristics of heterostructures’ layers using X-ray optics method is shown. The results of X-ray optics are in a good agreement with TEM measurements and we discover the cross-correlation between Ge layers in heterostructures containing thin Si spacers. The spectral sensitive region of structures under investigation is estimated by measuring photo-emf spectra at the temperature of 78 K and 300 K. The possibility of controlled forming of spectral sensitive region of Ge/Si heterostructures in the range of 1.5 – 2.8 μm is verified.