The first 70 semiconductor Auger processes

Abstract Ten basic Auger recombination processes are considered: two phononless and two phonon-assisted band-band processes, four processes involving one type of trap and two donor-acceptor processes. Expressions are obtained for the recombination coefficient by making a constant matrix element approximation, working out the impact ionization rate, and using detailed balance, noting that impact ionization is the inverse process of the Auger effect. Assuming all bands involved (excepting the band which contains the impact ionizing carrier) to be parabolic, described by a diagonalized effective mass tensor, new results for eight of the ten cases are found. Different band structure types lead to a multiplicity of each of the ten processes, yielding seventy different types. They are classified by utilising recent work on impact ionization thresholds as van Hove singularities. Processes involving excitons, pairs of particles bound to the same centre, etc. are not included here and add further Auger-type processes.