Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2 O 3 /Ga 2 O 3 (Gd 2 O 3 as gate dielectrics

The authors have successfully demonstrated self-aligned high-performance inversion-channel In 0.53 Ga 0.47 As MOSFETs using UHV-deposited nano-meter thick AI 2 O 3 /GGO dual-layer dielectrics and a TiN metal gate. Record-high drain current and transconductance, despite its challenging process, were achieved. Ring gate D-mode In 0.2 Ga 0.8 As MOSFETs using as a similar dual layer gate dielectric also exhibits very high current densities and transconductance.