A novel 4H-SiC PiN diode with improved forward conduction ability

In this work, we propose a novel 4H-SiC PiN diode to improve the forward current conduction ability. The new PiN structure features floating p-type buried regions in 30-μm thick N-type drifter layer. Formula derivation and TCAD numerical simulation are conducted to explore the conduction mechanisms and optimize the structural parameters. By introducing p-type buried regions into the drift layer, the electric field intensity near the boundary of the anode region has been enhanced, thus the magnitude of carrier injection from the P+ layer is increased. Simulation results of forward conduction characteristics show that the forward current density of the new PiN diode with p-type buried regions is 28.8% higher than that of the conventional PiN at the forward voltage of 5 V. Furthermore, the breakdown voltage of the new PiN cell can be up to 4350 V at the same time. Therefore, this current enhanced PiN diode with p-type buried regions is a promising diode that can be used in high power electronic applications.