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An implant-free AlGaAs/GaAs HBT IC technology incorporating 1.4 THz Schottky diodes
An implant-free AlGaAs/GaAs HBT IC technology incorporating 1.4 THz Schottky diodes
1991
S.J. Prasad
B. Vetanen
Christopher T. Haynes
Sung-Woo Park
I. Beers
Sara Diamond
G. Pubanz
John Ebner
Sergiu Sanielevici
Agoston Agoston
Keywords:
Heterojunction bipolar transistor
Artificial intelligence
Ion implantation
Schottky barrier
Mathematics
Machine learning
Electronic engineering
Metal–semiconductor junction
Terahertz radiation
Schottky diode
Correction
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