The method of manufacturing a semiconductor device manufacturing method and a memory

The present invention provides a method of manufacturing a semiconductor device and a method for manufacturing a memory embedded flash for 90nm. Forming a first dielectric layer, a first conductive layer, a second dielectric layer, a second conductive layer and the first etch stop layer. Windowing a first etch stop layer in a first device region and removing covers the outer surface of the first portion of the device region on the substrate a first etch stop layer, and forming a first isolation dielectric layer on the etched sidewall . A first etch stop layer and the first isolation dielectric layer as a mask, is etched to expose the surface of the substrate, the first trench is located to give the surface of the structure. Depositing a third conductive layer. Removing the second device region and a third conductive layer on the surface of a third dielectric spacer layer. Depositing an isolation dielectric and conductive material to re-form a third conductive layer and a third dielectric layer on the second isolation region surface of the device, forming an additional conductive layer and an additional dielectric isolation layer on a first surface region of the device. Depositing a second etch barrier layer and the third etch stop layer.