Industrial 0.15-μm AlGaN/GaN on SiC Technology for Applications up to Ka Band

This paper describes the main characteristics of the new GaN-on-SiC technology in development at UMS. This technology is based on a $0.15 - \mu \mathrm{m}$ gate-length and it is in the phase of industrial qualification for a target release by the end of the year. The results of two out of four demonstrators already successfully designed on the new technology are also reported: a 29.5–36 Ghz 9W HPA and a 15.5–18.5 GHz 20W HPA.