High compositional uniformity of epitaxial InGaAlAs on InP grown by MOVPE for uncooled laser diode

High compositional uniformity of InGaAlAs alloy on InP was demonstrated in a high-speed rotating disk MOVPE. The factors that influenced the compositional uniformity were investigated. PL wavelength range of less than 6 nm over 80% areas of 2-inch wafers was achieved at 1310 nm MQW structure with multiple wafers. Laser characteristic profile was good linearity and slope efficiency. The characteristics temperature, T/sub 0/, was 95.5 K over a temperature range from 25 to 85 degrees Celsius.