On the investigation of spiral inductors processed on Si substrates with thick porous Si layers

This paper investigates the high frequency (HF) characterization of spiral inductors on various Si substrates. Some of them were chemically anodized in order to form a thick porous Si layer, which provides a low substrate loss and greatly enhanced inductor quality factor. The HF performance and behavior of these inductors have been analyzed by modeling and parameter extraction in order to compare all the substrates.