Influence of Substrates on the Long-Range Order of Photoelectrodeposited Se-Te Nanostructures

The long-range order of anisotropic phototropic Se–Te films grown electrochemically at room temperature under uniform-intensity, polarized, incoherent, near-IR illumination has been investigated using crystalline (111)-oriented Si substrates doped degenerately with either p- or n-type dopants. Fourier-transform (FT) analysis was performed on large-area images obtained with a scanning electron microscope, and peak shapes in the FT spectra were used to determine the pattern fidelity in the deposited Se–Te films. Under nominally identical illumination conditions, phototropic films grown on p^+-Si(111) exhibited a higher degree of anisotropy and a more well-defined pattern period than phototropic films grown on n+-Si(111). Similar differences in the phototropic Se–Te deposit morphology and pattern fidelity on p^+-Si versus n^+-Si were observed when the deposition rate and current densities were controlled for by adjusting the deposition parameters and illumination conditions. The doping-related effects of the Si substrate on the pattern fidelity of the phototropic Se–Te deposits are ascribable to an electrical effect produced by the different interfacial junction energetics between Se–Te and p^+-Si versus n^+-Si that influences the dynamic behavior during phototropic growth at the Se–Te/Si interface.