Irradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of Robustness

The electrical behaviour of irradiated and post-irradiation annealed nMOSFETs with an implanted p-type body and having a N2O oxynitrided gate oxide is analysed in this work. This study reveals the existence of a “threshold fluence” which might change the predominant SiO2/SiC interface charge trapping type from donors to acceptors at a given energy. The irradiation fluence and energy limit that guaranty a normal or improved operation of the MOSFETs are also given.