A method of making tight contact floating gate silicon nanowire field effect transistor having

The present invention provides a method for preparing snug floating gate silicon nanowire field effect transistor, comprising steps of: a top-down process for the preparation of (111) type silicon on the silicon nanowires of particular dimensions, nitrogen retention silicon mask layer, and an insulating layer as a gate electrode made thereon, while the ends on a bulk silicon by a silicon nanowire prepared by ion implantation of the source and the drain, constitutes the basis of the silicon nanowire field effect transistor, Since the silicon nanowire integrally attached to the thin silicon nitride layer, the yield is greatly improved. Length and diameter of the nanowire prepared controllable, large specific surface area, strong activity, can be used as sensitive element of gas sensors and biochemical sensors, has broad application prospects.