Electrically Pumped Ultraviolet Random Lasing from p-ZnO:As Based on p-ZnO/N-GaN Heterojunction

p-ZnO:As is prepared by the GaAs interlayer doping method. The potential applications of p-ZnO:As are evaluated by applying it into the construction of a p-ZnO/n-GaN heterojunction, though its hall, electrochemical capacitance-voltage and photoluminescence results show a hole concentration at the level of ~1017 cm−3 and a good optical quality. Ultraviolet random lasing is detected from the studied device under forward bias. Specific lasing modes are confirmed to originate from p-ZnO:As by further introducing the p-ZnO/MgO/n-GaN heterostructure. The resulting random lasing phenomena demonstrate the promising prospects in device application of p-ZnO:As fabricated by using our methods.