InAsSb/InAsSbP double heterostructure lasers for 3-4 μm spectral range

Abstract InAsSb/InAsSbP double heterostructure diode lasers for the spectral range of 3–4 μm grown by liquid phase epitaxy have been investigated. The laser tuning was studied as a function of the stripe width. The temperature and current tuning of such lasers was measured. Emission spectra, far-field patterns and wavelength tuning versus current have been studied in the wide current range from threshold, I th , up to 6 I th at liquid nitrogen temperature. Current wavelength tuning in single-mode lasing has been obtained both towards the shorter wavelengths (up to 4.56 cm −1 ) and towards the longer wavelengths (up to 0.9 cm −1 ) at the temperature T  = 77 K. Comparison of the emission properties of the lasers, driven by different types of current pulses showed the same quantum-mechanical nature of current tuning. The theoretical model of this nonlinear optical phenomenon is proposed. The estimated times of current tuning defined mainly by the photon lifetime in the cavity are about 10 −9 to 10 −12  s. The emission line-width was determined to be 20 MHz. Optimal conditions were found for the use of the lasers and were employed for the detection of NH 3 , CH 3 Cl, OCS and atmospheric water.