A method at a deposition verspannungsinduzierender layers above a plurality of first and second plurality of transistors

A method comprising: Depositing a first stress-inducing layer over the plurality of first transistors and the plurality of second transistors, wherein the first strain-inducing layer is designed to generate a first elastic strain in channel regions of the first transistors; Forming a first portion of the first stress-inducing layer by selectively removing the first verspannungsindizierenden layer from above the plurality of second transistors; after the selective removal of said first stress-inducing layer from above the plurality of second transistors of: treating a surface portion to form a Atzsteuerschicht of the first part, wherein the treating of the surface area of ​​the first part includes performing an oxidation process in a first oxidizing plasma Conversely bung, wherein the oxidation process is designed to oxidize a material of the first stress-inducing layer; Forming a second stress-inducing layer over the plurality of first and second transistors, wherein said second stress inducing layer designed for ...