Light Emitting Diodes Fabricated from Liquid Phase Epitaxial InAs/InAsxP1-x-ySby/InAsx'P1-x'-y'Sby' and InAs/InAs1-xSbx Multi-Layers

Mid-infrared light emitting diodes (LED) in 3-5μm wavelength range have been fabricated from InAs/InAs x P 1-x-y Sb y /InAs x ,P 1-x'-y' Sb y ,composition graded layer and InAs/InAsSb multilayers. The heterostructures were grown by liquid phase epitaxy (LPE) between 600 and 520°C. An output power of 3.1 mW at HK and of 10 μW at 300 K have been obtained under a peak current of 100 mA (50 % duty ratio) from InAsSb multilayers. Recombination mechanisms for these diodes were studied by temperature-dependent emission spectra using Fourier transform infrated (FTIR) measurement system with double modulation. The output powers of the LEDs decrease rapidly at temperatures above 153 K suggesting that nonradiative and Auger recombinations are the main limitation of the device performance at hight temperatures.