Effect of pressure on the 2D carrier concentration in GaSb/InAs/GaSb quantum well system

Measurements of magnetoresistance and Hall emf have been carried out on GaSb/InAs/GaSb quantum wells of different thickness and with interfaces of different types in fields up to 7 T and at pressures up to 2.5 GPa at 4.2 K. The pressure dependence of the electron and hole concentrations was derived by analysis of Shubnikov-de Haas oscillations and magnetoresistance tensor components, made in terms of the classical model operating with carriers of two types. It is shown that pressure initiates a transition from semimetallic to semiconducting regime.