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High Frequency and Noise Analyses of In 0.78 Ga 0.22 Sb Channel HEMTs by Monte Carlo Simulation
High Frequency and Noise Analyses of In 0.78 Ga 0.22 Sb Channel HEMTs by Monte Carlo Simulation
2020
Konosuke Kumasaka
Shusaku Shirai
Satoshi Endoh
Hiroki I. Fujishiro
Keywords:
High-electron-mobility transistor
Materials science
Monte Carlo method
Computational physics
Communication channel
Correction
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