Solution processed IZTO thin film transistor on silicon nitride dielectric layer

Abstract Solution process-based inorganic indium–zinc–tin oxide semiconductor layer was applied to fabricate a thin film transistor (TFT) by annealing at 600 °C on plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiN x ) dielectric layer. The spin-coated indium–zinc–tin oxide (IZTO) transistor has a field-effect mobility of 4.36 cm 2 /V s with on/off ratio of 10 5 having the subthreshold voltage shift of 0.537 V/dec. The device characterization and surface analysis after annealing were performed and compared with results before annealing. Our results offer the feasibility of solution-based oxide semiconductor transistors for cost-effective display or other electronic devices.