Impact of fluorine plasma treatment on AlGaN/GaN high electronic mobility transistors by simulated and experimental results

2016 
This paper demonstrates the effect of fluorine plasma treatment on the performance of AlGaN/GaN high electronic mobility transistors. The impact of ion implantation depth on threshold voltage is si...
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    0
    References
    0
    Citations
    NaN
    KQI
    []