Electrical and Schottky contact properties of Pt/n-Si1–xGex/n-Si(100) heterostructure

We report on n-type (100) oriented Si 0 . 7 6 Ge 0 . 2 4 samples grown by silicon molecular beam epitaxy (Si-MBE). The grown wafer was, first, cut into small pieces. Some of these pieces were annealed under an inert gas atmosphere at 600 °C, 700 °C and 800 °C for 1h to induce partial relaxation in Si 1 - x Ge x . The formation of Schottky junction was made by Pt deposition on n-Si 0 . 7 6 Ge 0 . 2 4 . The electrical properties of, both, the unannealed and annealed Pt/n-Si 0 . 7 6 Ge 0 . 2 4 /n-Si were studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements. These measurements have been done under different temperatures, and Schottky barrier heights have been determined. Also, these results have been compared with Pt / n-Si.