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Vertical tunneling filed effect transistor based on p++ silicon and MoS2 heterostructure
Vertical tunneling filed effect transistor based on p++ silicon and MoS2 heterostructure
2018
Gwang Hyuk Shin
Hamin Park
Bondae Koo
Youngjun Woo
Jaeeun Lee
Sung-Yool Choi
Keywords:
Heterojunction
Quantum tunnelling
Optoelectronics
Transistor
Silicon
Materials science
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