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Channel Hot-Carrier Effect of 4H-SiC MOSFET | NIST
Channel Hot-Carrier Effect of 4H-SiC MOSFET | NIST
2009
Liangchun
Kin P. Cheung
John S. Suehle
Jason P. Campbell
Kuang Sheng
Aivars J. Lelis
Sei-Hyung Ryu
Keywords:
NIST
Composite material
MOSFET
Materials science
Electronic engineering
Communication channel
hot carrier effect
Optoelectronics
Correction
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