Carrier-concentration dependence of critical superconducting current induced by the proximity effect in silicon
1986
The carrier-concentration dependence of the critical superconducting current induced by the proximity effect in a heavily B-doped Si has been studied experimentally. It is found that the critical current which flows through the p-type-Si--coupled junction can be controlled both by the acceptor concentration and by the induced carrier concentration by the electric potential applied to the gate electrode.
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