Processing and properties of arsenic trisulfide chalcogenide glasses for direct laser writing of 3D microstructures
2014
Arsenic trisulfide (As 2 S 3 ) is a transparent material from ~620 nm to 11 μm with direct applications in sensors, photonic
waveguides, and acousto-optics. As 2 S 3 may be thermally deposited to form glassy films of molecular chalcogenide
(ChG) clusters. It has been shown that linear and multi-photon exposure can be used to photo-pattern thermally deposited
As 2 S 3 . Photo-exposure cross-links the film into a network solid. Treating the photo-patterned material with a polarsolvent
removes the unexposed material leaving behind a structure that is a negative-tone replica of the photo-pattern. In
this work, nano-structure arrays were photo-patterned in As 2 S 3 films by multi-photon direct laser writing (DLW) and the
resulting structure, morphology, and chemical composition were characterized and correlated with the conditions of the
thermal deposition, patterned irradiation, and etch processing. Raman spectroscopy was used to characterize the
chemical structure of the unexposed and photo-exposed material, and near infrared ellipsometry was used to measure the
refractive index. Physical characterization including structure size and surface adhesion of nano-scale features is related
to the processing conditions.
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