Application of high-κ gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology

High-k gate dielectrics and metal gate electrodes are required for enabling continued equivalent gate oxide thickness scaling, and hence high performance, and for controlling gate oxide leakage for both future silicon and emerging nonsilicon nanoelectronic transistors. In addition, high-K gate dielectrics and metal gates are required for the successful demonstration of high performance logic transistors on high-mobility non-silicon substrates with high iON/iOFF ratios.