language-icon Old Web
English
Sign In
Acemap > Paper > Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors operational at 400 °C*

Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors operational at 400 °C*

2021 
Keywords:
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    21
    References
    1
    Citations
    NaN
    KQI
    []
    logo
    • CCF Conference Analysis
    • Map Galaxy
    • What's New
    © Copyright 2015-2020 Acemap, Inc. Shanghai Jiao Tong University.