Polycrystalline Silicon Single Electron Island by Excimer Laser Irradiation on a-Si Film

We propose a novel fabrication method for a room temperature operating single-electron memory using the size and location controlled poly-Si island by lithographic technique and excimer laser annealing. We have patterned tip shaped excimer laser windows and irradiated laser energy through windows for crystallizing amorphous silicon. As a result of laser energy, the poly-Si grains are growing from patterned window side so that the fine grain and isolated large poly-Si quantum dot are inherently formed by well-known ACSLG regime. The oxidation was then performed by RTP at 950 °C for 30 seconds in order to isolate quantum island and fine poly-Si grains for quantum dot. The peaks of the poly-oxide along the poly-Si grain boundaries were lowered during that oxidation and isolated the poly-Si grains and made oxide barriers.