Manufacture of capacitance element for integrated circuit
2001
The present invention discloses a method for manufacturing a capacitor element which is an integrated circuit. The method comprising: forming an adhesive layer on a substrate of titanium film, titanium oxide and the diffusion barrier layer is formed on the surface of the adhesive layer, and a step of sequentially forming a lower electrode, ferroelectric film and an upper electrode and the like on the diffusion barrier layer.
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