The heteroepitaxial growth of GaP films on Si substrates

Abstract Heteroepitaxial GaP films were grown on (100) silicon substrates with a dual deposition process which consisted of a pyrolytically deposited GaP surface primer and a halide-transport-deposited bulk film. Their electrical, optical, and structural characteristics were compared with simultaneously grown homoepitaxial GaP/GaP films. Except for some cracking in the GaP/Si films, these two types of films exhibited nearly identical properties. Hall mobilities at 77 K for GaP/Si were up to 1730 cm 2 /V-sec for carrier concentrations of 7.7×10 13 atoms/cm 3 . These films were doped with tellurium and nitrogen.