Study of gap states density in A-Si: H using thermally stimulated current in a space charge zone

Abstract From a study of thermally stimulated current (TSC) performed on a -Si: H Schottky diodes, we exhibit the existence of several distinct families of levels. The exponential band tail states contribute partly to the TSC spectrum and a method of characterization is derived from the study of the associated peak. The other deepest levels are associated with ponctual defects such as impurities or structural defects and represent an other class of traps not commonly reported in the literature about a -Si: H.