RBS/channeling analysis of damage and annealing processes of Nb-implanted TiO2

Abstract Single crystalline TiO 2 (0 0 1) was implanted with Nb + ions RT (room temperature) and at 130 K to the doses of 1.1 × 10 16 and 0.9 × 10 16 Nb/cm 2 , respectively. The damage and its recovery processes during isochronal annealing were analyzed by the RBS/channeling method. As a result, the TiO 2 crystal was found to be amorphized by 130 K implantation while a crystalline part remained after RT-implantation. The partially damaged layer produced by RT-implantation almost recovered with one annealing stage at 500°C. The layer amorphized by 130 K implantation showed two annealing stages, i.e., 300–600°C and above 800°C. Between these two stages, 800°C annealing made the substitution-ality of Nb decrease to almost 0%, which suggests a phase transition of the crystal. After annealing at 1200°C, the mixed oxide of Nb x Ti 1− x O 2 was formed in either sample, which was confirmed by RBS angular scan measurement and XPS analysis.