Scalable single-photon sources in atomically thin MoS2

2D materials offer a wide range of perspectives for hosting highly localized 0D states, e.g. vacancy defects, that offer great potential for integrated quantum photonic applications. Here, we create individual defects that act as our single-photon emitters by highly local He-ion irradiation in a monolayer MoS2 van der Waals heterostructure. The defects show anti-bunched light emission at a characteristic energy of ~ 1.75 eV. The emission is highly homogeneous and background free due to the hBN encapsulation with a creation yield of > 70%. Spectroscopic investigation of individual single-photon emitters reveals a strongly asymmetric line shape resembling interaction with acoustic phonons in excellent agreement with an independent boson model. Moreover, emitters are spatially integrated and electrically controlled in field-switchable van der Waals devices. Our work firmly establishes 2D materials as a highly scalable material platform for integrated quantum photonics.