Influence of Microwave Pulse Power on The Burnout Effect of The AlGaN/GaN HEMT in a LNA

The influence of microwave pulse power on the burnout effect of the AlGaN/GaN high electron mobility transistor (HEMT) in a low noise amplifier (LNA) is studied. The LNA constructed by an AlGaN/GaN HEMT is modeled by using our independent-developed device-circuit joint simulator. The correctness of our simulator is verified by comparing the simulated DC characteristics of the studied HEMT by using our simulator and two kinds of commercial software. The simulated gains obtained by using our simulator and the commercial software ADS are in agreement with the measured results. The results show that the relationship between the injected power and the actual absorbed power satisfies a linear relationship, and the burnout time decreases with the increase of the injected power.