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(Invited) Electric-Double-Layer-Gated AlGaN/GaN High Electron Mobility Transistors (HEMTs) for Biosensors
(Invited) Electric-Double-Layer-Gated AlGaN/GaN High Electron Mobility Transistors (HEMTs) for Biosensors
2016
Chia-Ho Chu
Indu Sarangadharan
Abiral Regmi
Yen-Wen Chen
Chen-Pin Hsu
Yu-Lin Wang
Keywords:
Electron mobility
Double layer (surface science)
Transistor
Biosensor
Analytical chemistry
Materials science
algan gan
Optoelectronics
high electron
Correction
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