Millimeter‐wave monolithic barrier n‐n+ diode grid frequency doubler

A monolithic quasioptical frequency multiplier array, comprised of approximately 1760 Ga0.5Al0.5As/GaAs barrier n‐n+ (BNN) diodes, has been successfully fabricated. The BNN diode, first fabricated in these studies, possesses strongly nonlinear capacitance‐voltage (C‐V) characteristics, thereby offering the potential for a highly efficient device for millimeter‐wave frequency multiplication applications. A frequency doubled power of 2.1 W at 66 GHz has been observed with a conversion efficiency of 7.5%.