Moderately doped channel multiple-finFET for logic applications
2005
In this paper, moderately doped channel (MDC) multiple-FinFET is proposed and its electrical characteristics are investigated using 3D process and device, and 2D mixed-mode device and circuit simulation. It is shown that the MDC offers a better immunity to variations of the fin profile than the undoped channel for a short channel device, and Multiple-FinFET is critical for logic applications. The implementation of an asymmetrical doping profile further improves the performance of MDC Multiple-FinFET
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