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Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel
Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel
2020
Pengfei Ma
Jiacheng Gao
Wenhao Guo
Guanqun Zhang
Yiming Wang
Qian Xin
Yuxiang Li
Aimin Song
Keywords:
Optoelectronics
Trapping
Communication channel
Chemistry
gate stack
Condensed matter physics
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